DISCRETE HIGH OUTPUT HEADPHONE AMPLIFIER
SPECIFICATIONS
Frequency Response: 20Hz-20Khz, -0.1db, 2Hz-200KHz, -3dB Maximum Power, 32 ohms: 1.2W RMS per channel Maximum Power, 50 ohms: 1.0W RMS per channel Maximum Power, 300 ohms: 260mW RMS per channel Maximum Power, 600 ohms: 130mW RMS per channel THD: Less than 0.005%, 20Hz-20KHz, at 1V RMS IMD: Less than 0.007%, CCIF SNR: Greater than 100db, unweighted, referenced to 1V RMS Crosstalk: -70dB, 20 Hz-20KHz Output Impedance: Less than 0.1 ohms Gain: 5 (14db) Topology: Fully discrete FET/bipolar, Class AB, DC coupled throughout Protection: Standard failsafe DC power input and muting relay Power Supply: “Wall wart” style 16VAC transformer, regulated +/- 15V rails Power Consumption: 4W Size: 5 x 3.5 x 1.25” Weight: 1 lb
All measurements made on a Stanford Research SR1 or SR1+ Audio Analyzer