BALANCED CROSSFET HEADPHONE AMPLIFIER
SPECIFICATIONS
Frequency Response: 20Hz-20Khz, -0.1db, 2Hz-400KHz, -3dB Maximum Power, 32 ohms: 8.0W RMS per channel Maximum Power, 50 ohms: 5.0W RMS per channel Maximum Power, 300 ohms: 850mW RMS per channel Maximum Power, 600 ohms: 425mW RMS per channel THD: <0.006%, 20Hz-20KHz, at 1V RMS IMD: <0.008%, CCIR SNR: >104db, unweighted, referenced to 1V RMS Crosstalk: >-75dB, 20 Hz-20KHz Output Impedance: 1.5 ohms Gain: 8 (18db) Topology: Fully discrete FET, cross-shunt push-pull Crossfet output stage, no overall feedback, noninverting, single voltage gain stage Power Supply: specific Circlotron 4-primary output stage transformer with over 65,000uF filter capacitance, plus dedicated transformer for high-voltage asymmetrical discrete-regulated front end stage with 90V/25V rails and over 15,000uf of filter capacitance Inputs: one pair balanced XLR, one pair single-ended RCAs, choose one Outputs: one 4-pin balanced female XLR, one pair dual 3-pin female XLR, and one pair male XLR preamp outs Power Consumption: 45W Size: 16 x 8.75 x 2.25” Weight: 13 lbs
All measurements made on a Stanford Research SR1+ Audio Analyzer